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SSM6N35FE - Toshiba

Description: N-ch x 2 MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-563(ES6)

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SSM6N35FE - Toshiba PCB footprint - Other - Other - 2-2N1S
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SSM6N35FE - Toshiba  - 3D model - Other - 2-2N1S
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SSM6N35FE Details

  • Manufacturer Part Number:

    SSM6N35FE

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.18 A

  • Drain-source On Resistance-Max:

    4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.1 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM6N35FE Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the copper area should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, ensure good thermal design, use a heat sink if necessary, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • The maximum safe operating area (SOA) for the SSM6N35FE is not explicitly stated in the datasheet. However, Toshiba recommends following the SOA curves provided in the application notes to ensure the device operates within a safe region and to prevent damage or degradation.
  • The SSM6N35FE is a commercial-grade device, and its reliability and quality may not meet the requirements of high-reliability or automotive applications. Toshiba offers other devices with enhanced reliability and quality, such as the SQM6N35FE, which may be more suitable for these applications.
  • The SSM6N35FE has an internal ESD protection diode, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.

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SSM6N35FE Overview

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