Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
The SSM6N36TU,LF requires a bias voltage of 5V to 15V on the gate pin, with a recommended bias current of 1mA to 10mA. Ensure the bias circuit is designed to provide a stable voltage and current.
The SOA limits for the SSM6N36TU,LF are not explicitly stated in the datasheet. However, as a general guideline, the device should not be operated above 36V drain-source voltage, 6A drain current, and 150°C junction temperature.
While the SSM6N36TU,LF is a fast-switching device, its maximum switching frequency is not explicitly stated in the datasheet. However, based on its rise and fall times, it is suitable for switching frequencies up to 100kHz. Above this frequency, the device may experience increased switching losses and reduced efficiency.
The SSM6N36TU,LF has an internal ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.
Trust Checks
This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored
SSM6N36TU,LF Overview
Use the download button to access the SSM6N36TU,LF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SSM6N,
or try a keyword search, such as Small Signal Field-Effect Transistors
