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SSM6N78FU - Toshiba

Description: N-ch x 2 MOSFET, Low leakage current, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-363(US6)

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PCB Footprints
SSM6N78FU - Toshiba PCB footprint - Other - Other - 1-2T1S/2-2J1S_2025-5
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3D Models
SSM6N78FU - Toshiba  - 3D model - Other - 1-2T1S/2-2J1S_2025-5
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SSM6N78FU Details

  • Manufacturer Part Number:

    SSM6N78FU

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.25 A

  • Drain-source On Resistance-Max:

    2.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM6N78FU Overview

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