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STB18NF30 - STMicroelectronics

Description: Automotive-grade N-channel 330 V, 160 mΩ typ., 18 A STripFET II Power MOSFET in a D²PAK package

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STB18NF30 - STMicroelectronics PCB footprint - Other - Other - STB18NF30-1
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STB18NF30 Details

  • Manufacturer Part Number:

    STB18NF30

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, D2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    330 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    SPLIT GATE TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB18NF30 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the STB18NF30 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To calculate the power dissipation of the STB18NF30, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds x Id) + (Vgs x Igs), where Vds is the drain-source voltage, Id is the drain current, Vgs is the gate-source voltage, and Igs is the gate current.
  • To minimize EMI and thermal issues, it's recommended to follow a good PCB layout practice for the STB18NF30. This includes keeping the drain and source pins as close as possible to the heat sink, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, it's recommended to use a Kelvin connection for the source pin to reduce the inductance and improve the thermal performance.
  • Yes, the STB18NF30 can be used in high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate drive requirements. Additionally, the PCB layout and the selection of the gate driver and other components should be optimized for high-frequency operation.
  • To protect the STB18NF30 from overvoltage and overcurrent, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and limit the current flowing through the device. It's also essential to follow the recommended operating conditions and to design the application with sufficient margin to prevent overvoltage and overcurrent conditions.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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