Part Image

STB6N80K5 - STMicroelectronics

Description: N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFETs in a D²PAK package

Download STB6N80K5 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STB6N80K5 - STMicroelectronics PCB footprint - Other - Other - STB6N80K5
click to zoom

STB6N80K5 Details

  • Manufacturer Part Number:

    STB6N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, D2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    85 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB6N80K5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STB6N80K5 is -40°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 80V.
  • The recommended gate resistor value for the STB6N80K5 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • To protect the STB6N80K5 from overvoltage and overcurrent, use a voltage regulator and a current limiter, and ensure that the device is operated within its recommended operating conditions.
  • The maximum allowable power dissipation for the STB6N80K5 is 150W, but this can be increased with proper heat sinking and thermal management.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STB6N80K5 Overview

Use the download button to access the STB6N80K5 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like STB6N, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STB6N80K5

Showing 0 results