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STF11N60M2-EP - STMicroelectronics

Description: N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package

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STF11N60M2-EP - STMicroelectronics - PCB symbol
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STF11N60M2-EP - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP--
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STF11N60M2-EP - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP--
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STF11N60M2-EP Details

  • Manufacturer Part Number:

    STF11N60M2-EP

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.595 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.7 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF11N60M2-EP Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF11N60M2-EP is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive power dissipation or thermal stress.
  • To ensure the STF11N60M2-EP is fully turned on and off, you should provide a sufficient gate-source voltage (Vgs) and a low enough gate resistance (Rg). A general rule of thumb is to use a Vgs of at least 10V and an Rg of less than 10 ohms. Additionally, make sure the gate drive circuitry is capable of providing a sufficient current to charge and discharge the gate capacitance quickly.
  • The recommended PCB layout and thermal management for the STF11N60M2-EP involve using a low-thermal-resistance PCB material, placing the MOSFET on a thick copper plane, and using thermal vias to dissipate heat. Additionally, ensure good airflow around the device and consider using a heat sink if the application requires high power dissipation.
  • The parasitic diode and body diode in the STF11N60M2-EP can be handled by using a diode in anti-parallel with the MOSFET, such as a Schottky diode, to reduce the reverse recovery time and prevent voltage spikes. Additionally, ensure the gate drive circuitry is designed to handle the diode's reverse recovery characteristics.
  • The reliability and lifetime expectations for the STF11N60M2-EP depend on various factors, including operating conditions, temperature, and quality of the device. As a general guideline, the device is designed to meet the industry-standard reliability requirements, and its lifetime can be estimated based on the device's thermal and electrical stress. Consult the datasheet and application notes for more information.

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STF11N60M2-EP Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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