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STGB10M65DF2 - STMicroelectronics

Description: Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D²PAK package

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STGB10M65DF2 - STMicroelectronics PCB footprint - Other - Other - STGB10M65DF2-2
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STGB10M65DF2 Details

  • Manufacturer Part Number:

    STGB10M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.82

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    115 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    260 ns

  • Turn-on Time-Nom (ton):

    27 ns

  • VCEsat-Max:

    2 V

STGB10M65DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGB10M65DF2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGB10M65DF2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The formula is: Pd = (Vd * Id) / (1 - (Rth(j-a) * Tj)).
  • To minimize thermal resistance, it's recommended to use a PCB layout with a large copper area connected to the drain pad, and to place the device close to the heat sink or thermal pad. Additionally, use multiple vias to connect the copper area to the inner layers to improve heat dissipation.
  • Yes, the STGB10M65DF2 is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching losses, gate drive requirements, and layout parasitics to ensure reliable operation.
  • When selecting a gate driver for the STGB10M65DF2, consider the device's gate charge, threshold voltage, and switching frequency. Choose a gate driver that can provide the required current and voltage to ensure fast and reliable switching.

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STGB10M65DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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