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STGB30H60DLLFBAG - STMicroelectronics

Description: IGBT Trench Field Stop 600 V 60 A 260 W Surface Mount TO-263 (D2PAK)

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STGB30H60DLLFBAG - STMicroelectronics PCB footprint - Other - Other - D²PAK_2022-23
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STGB30H60DLLFBAG - STMicroelectronics  - 3D model - Other - D²PAK_2022-23
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STGB30H60DLLFBAG Details

  • Manufacturer Part Number:

    STGB30H60DLLFBAG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, D2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    2.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AUTOMOTIVE IGNITION

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    370 ns

  • VCEsat-Max:

    2.15 V

STGB30H60DLLFBAG Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the STGB30H60DLLFBAG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the device to dissipate heat efficiently.
  • The recommended gate resistor value for the STGB30H60DLLFBAG is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact STMicroelectronics support for more information.
  • Yes, the STGB30H60DLLFBAG is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the STGB30H60DLLFBAG from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace is ESD-protected, and use ESD-protected packaging and storage materials. Avoid touching the device's pins or exposing it to static electricity.

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STGB30H60DLLFBAG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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