STGB30H65DFB2 footprint, schematic symbol and 3D model by STMicroelectronics

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STGB30H65DFB2 - STMicroelectronics PCB footprint - Other - Other - STGB30H65DFB2-3

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Datasheet Download Datasheet
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Part Number STGB30H65DFB2
Manufacturer STMicroelectronics
Pin Count 3
Part Category Transistor IGBT
Package Category Other
Footprint Name Other - STGB30H65DFB2-3
Released Date Oct 4, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STGB30H65DFB2 Details

Manufacturer Part Number:
STGB30H65DFB2
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Date Of Intro:
2020-04-07
Manufacturer:
STMicroelectronics
YTEOL:
5.82
Case Connection:
COLLECTOR
Collector Current-Max (IC):
50 A
Collector-Emitter Voltage-Max:
650 V
Configuration:
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max:
7 V
Gate-Emitter Voltage-Max:
20 V
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Packing Method:
TR, 13 INCH
Peak Reflow Temperature (Cel):
245
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
167 W
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
184 ns
Turn-on Time-Nom (ton):
27.5 ns
VCEsat-Max:
2.1 V

STGB30H65DFB2 Frequently Asked Questions (FAQs)

The maximum junction temperature (Tj) for the STGB30H65DFB2 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
To calculate the maximum allowable power dissipation, you need to consider the thermal resistance (Rth) and the maximum junction temperature (Tj). The formula is: Pd = (Tj - Ta) / Rth, where Pd is the power dissipation, Ta is the ambient temperature, and Rth is the thermal resistance. For the STGB30H65DFB2, Rth is typically around 1.5°C/W.
The recommended gate drive voltage for the STGB30H65DFB2 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to avoid damage to the device.
Yes, the STGB30H65DFB2 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, thermal management, and layout design to ensure reliable operation.
To ensure proper cooling, consider the following: use a heat sink with a thermal interface material, ensure good airflow, and avoid thermal hotspots. You can also use thermal simulation tools to optimize your design and reduce thermal stress on the device.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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