STGB6M65DF2 footprint, schematic symbol and 3D model by STMicroelectronics

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STGB6M65DF2 - STMicroelectronics PCB footprint - Other - Other - D²PAK_2022-21

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Datasheet Download Datasheet
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Part Number STGB6M65DF2
Manufacturer STMicroelectronics
Pin Count 3
Part Category Transistor IGBT
Package Category Other
Footprint Name Other - D²PAK_2022-21
Released Date Oct 4, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STGB6M65DF2 Details

Manufacturer Part Number:
STGB6M65DF2
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
5.82
Case Connection:
COLLECTOR
Collector Current-Max (IC):
12 A
Collector-Emitter Voltage-Max:
650 V
Configuration:
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max:
7 V
Gate-Emitter Voltage-Max:
20 V
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
88 W
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
291 ns
Turn-on Time-Nom (ton):
24 ns
VCEsat-Max:
2 V

STGB6M65DF2 Frequently Asked Questions (FAQs)

The maximum safe operating area (SOA) for the STGB6M65DF2 is not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in the application note AN5042, which provides SOA curves for similar devices. Additionally, it's essential to perform thorough thermal and electrical simulations to ensure the device operates within a safe region.
To optimize the gate drive circuit for the STGB6M65DF2, consider the following: use a low-impedance gate drive circuit, ensure a fast rise and fall time (typically <10ns), and maintain a stable gate voltage. It's also recommended to use a gate driver IC specifically designed for high-power MOSFETs, such as the STGAP2SiCS or the UCC37322. Refer to the application note AN5042 for more detailed guidance.
For optimal performance and thermal management, follow these PCB layout guidelines: keep the drain and source pins as close as possible, use a large copper area for heat dissipation, and ensure a low-inductance path for the drain current. It's also recommended to use a 4-layer PCB with a dedicated power plane and a solid ground plane. Refer to the application note AN5042 for more detailed layout recommendations.
To handle the high dv/dt rating of the STGB6M65DF2, ensure that the gate drive circuit is designed to withstand the high voltage slew rates. Use a gate driver IC with a high dv/dt capability, and consider adding a dv/dt filter or a snubber circuit to reduce the voltage stress on the device. Additionally, ensure that the PCB layout is optimized for low inductance and high-frequency noise reduction.
For effective thermal management, consider the following: use a heat sink with a high thermal conductivity, ensure good thermal contact between the device and the heat sink, and provide adequate airflow. It's also recommended to use thermal interface materials (TIMs) with high thermal conductivity and to follow the guidelines provided in the application note AN5042 for thermal design and simulation.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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