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STGF10M65DF2 - STMicroelectronics

Description: Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

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STGF10M65DF2 - STMicroelectronics - PCB symbol
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STGF10M65DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP_2022
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STGF10M65DF2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP_2022
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STGF10M65DF2 Details

  • Manufacturer Part Number:

    STGF10M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    260 ns

  • Turn-on Time-Nom (ton):

    27 ns

  • VCEsat-Max:

    2 V

STGF10M65DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGF10M65DF2 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To calculate the power dissipation of the STGF10M65DF2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The recommended gate drive voltage for the STGF10M65DF2 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance.
  • Yes, the STGF10M65DF2 is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may degrade at higher frequencies, so it's essential to carefully evaluate the device's characteristics and the application's requirements.
  • To ensure the reliability of the STGF10M65DF2 in a high-temperature environment, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device's operating conditions, such as voltage and current, should be carefully monitored and controlled to prevent overheating.

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STGF10M65DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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