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STGF4M65DF2 - STMicroelectronics

Description: IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss

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STGF4M65DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-FP
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3D Models
STGF4M65DF2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220-FP
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STGF4M65DF2 Details

  • Manufacturer Part Number:

    STGF4M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    TO-220FP

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2016-11-23

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    23 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    296 ns

  • Turn-on Time-Nom (ton):

    19.6 ns

  • VCEsat-Max:

    2.1 V

STGF4M65DF2 Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the top and bottom layers, with vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • Although the datasheet specifies a maximum VCC voltage of 3.6V, it's recommended to limit the voltage to 3.3V to ensure reliable operation and minimize the risk of damage or latch-up.
  • To prevent ESD damage, handle the device by the body or pins, avoid touching the pins, and use an ESD wrist strap or mat during assembly. Ensure that the PCB and components are properly grounded, and use ESD-protected packaging and storage materials.
  • For optimal performance, the clock signal should have a rise and fall time of less than 1ns, and a clock frequency jitter of less than 100ps. The clock signal should also be free from noise and ringing.

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STGF4M65DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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