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STGF6M65DF2 - STMicroelectronics

Description: Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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STGF6M65DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP-
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STGF6M65DF2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP-
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STGF6M65DF2 Details

  • Manufacturer Part Number:

    STGF6M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    12 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24.2 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    291 ns

  • Turn-on Time-Nom (ton):

    24 ns

  • VCEsat-Max:

    2 V

STGF6M65DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGF6M65DF2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGF6M65DF2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The formula is: Pd = (Vds * Ids) + (Rth(j-a) * Tj). Refer to the datasheet for the specific values.
  • For optimal PCB layout, follow these guidelines: keep the drain and source pins as close as possible, use a solid ground plane, and place decoupling capacitors near the device. Additionally, ensure good thermal conductivity by using a thermal pad and a heat sink if necessary. Consult the application note AN2345 from STMicroelectronics for more details.
  • Yes, the STGF6M65DF2 is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching characteristics, such as the rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation. Additionally, be aware of the potential for electromagnetic interference (EMI) and take necessary precautions.
  • To protect the STGF6M65DF2 from overvoltage and overcurrent conditions, use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing resistors. You can also consider using a dedicated protection IC, such as the ST's IPD60R1K4P6, which provides overvoltage, overcurrent, and thermal protection.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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