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STGFW20V60F - STMicroelectronics

Description: Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

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STGFW20V60F - STMicroelectronics - PCB symbol
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STGFW20V60F - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF-ren1
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3D Models
STGFW20V60F - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-3PF-ren1
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STGFW20V60F Details

  • Manufacturer Part Number:

    STGFW20V60F

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3PF

  • Package Description:

    ROHS COMPLIANT, TO-3PF, 3 PIN

  • Pin Count:

    2

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    173 ns

  • Turn-on Time-Nom (ton):

    49 ns

STGFW20V60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STGFW20V60F is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To calculate the power dissipation of the STGFW20V60F, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * Tj), where Vds is the drain-source voltage, Ids is the drain-source current, and Tj is the junction temperature.
  • The recommended gate drive voltage for the STGFW20V60F is between 10V and 15V, with a maximum gate-source voltage (Vgs) of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide damage.
  • Yes, the STGFW20V60F is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation. It's recommended to consult the datasheet and application notes for more information on high-frequency operation.
  • To protect the STGFW20V60F from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. It's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device, and a current sense resistor or a current limiter to prevent overcurrent conditions.

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STGFW20V60F Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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