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STGP30H60DFB - STMicroelectronics

Description: Trench gate field-stop 600 V, 30 A high speed HB series IGBT

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STGP30H60DFB - STMicroelectronics - PCB symbol
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PCB Footprints
STGP30H60DFB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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STGP30H60DFB - STMicroelectronics - 3D model - Transistor Outline, Vertical - ---0TO-220_(Height=4.6mm)
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STGP30H60DFB Details

  • Manufacturer Part Number:

    STGP30H60DFB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.25

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    223 ns

  • Turn-on Time-Nom (ton):

    51.1 ns

STGP30H60DFB Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGP30H60DFB can withstand is 175°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate resistor value for the STGP30H60DFB is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the STGP30H60DFB can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and that the gate drive circuits are synchronized to prevent shoot-through currents.
  • The recommended dead-time for the STGP30H60DFB in a half-bridge configuration is typically between 100 ns and 500 ns, depending on the specific application and switching frequency.

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STGP30H60DFB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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