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STGP4M65DF2 - STMicroelectronics

Description: Trench gate field-stop IGBT, M series 650 V, 4 A low loss

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STGP4M65DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ----TO-220 type A package information-
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STGP4M65DF2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - ----TO-220 type A package information-
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STGP4M65DF2 Details

  • Manufacturer Part Number:

    STGP4M65DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer Package Code:

    TO-220AB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    296 ns

  • Turn-on Time-Nom (ton):

    19.6 ns

  • VCEsat-Max:

    2.1 V

STGP4M65DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGP4M65DF2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGP4M65DF2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) of the package. The formula is: Pd = (Vds x Ids) + (Vgs x Igs) + (Rth x (Tj - Ta)), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, Igs is the gate-source current, Rth is the thermal resistance, Tj is the junction temperature, and Ta is the ambient temperature.
  • The recommended gate drive voltage for the STGP4M65DF2 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide breakdown.
  • Yes, the STGP4M65DF2 is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching losses, gate charge, and parasitic capacitances to ensure reliable operation. It's recommended to use a suitable gate driver and to optimize the PCB layout to minimize parasitic inductances and capacitances.
  • To protect the STGP4M65DF2 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing resistors. Additionally, consider using a fuse or a current limiter to prevent excessive current flow in case of a fault.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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