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STGP8M120DF3 - STMicroelectronics

Description: Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

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STGP8M120DF3 - STMicroelectronics - PCB symbol
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PCB Footprints
STGP8M120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 (STD-ST dual gauge) type A
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3D Models
STGP8M120DF3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220 (STD-ST dual gauge) type A
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STGP8M120DF3 Details

  • Manufacturer Part Number:

    STGP8M120DF3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    356 ns

  • Turn-on Time-Nom (ton):

    28.8 ns

  • VCEsat-Max:

    2.3 V

STGP8M120DF3 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, drain-source voltage, and gate-source voltage. Implement over-temperature, over-voltage, and over-current protection mechanisms.
  • Use a dedicated gate driver IC with a high current capability (>1A) and a low output impedance. Ensure the driver's output voltage is compatible with the device's gate-source voltage rating.
  • Implement ESD protection diodes on the gate and drain pins. Use a TVS (Transient Voltage Suppressor) or a Zener diode with a suitable voltage rating. Ensure the PCB layout minimizes parasitic inductance and capacitance.

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STGP8M120DF3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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