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STGW25H120DF2 - STMicroelectronics

Description: Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

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STGW25H120DF2 - STMicroelectronics - PCB symbol
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PCB Footprints
STGW25H120DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_2022
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3D Models
STGW25H120DF2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247_2022
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STGW25H120DF2 Details

  • Manufacturer Part Number:

    STGW25H120DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    339 ns

  • Turn-on Time-Nom (ton):

    41 ns

  • VCEsat-Max:

    2.6 V

STGW25H120DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the STGW25H120DF2 is 150°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The recommended gate resistor value for the STGW25H120DF2 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the STGW25H120DF2 can be used in a half-bridge configuration, but it is recommended to follow the guidelines provided in the datasheet and application notes to ensure proper operation and to minimize the risk of shoot-through currents.
  • To protect the STGW25H120DF2 from overvoltage and overcurrent, it is recommended to use a suitable voltage regulator and overcurrent protection circuit, such as a fuse or a current sense resistor, in addition to following the guidelines provided in the datasheet.

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STGW25H120DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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