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STGW30H60DLFB - STMicroelectronics

Description: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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STGW30H60DLFB - STMicroelectronics - PCB symbol
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STGW30H60DLFB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGW30H60DLFB
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STGW30H60DLFB - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGW30H60DLFB
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STGW30H60DLFB Details

  • Manufacturer Part Number:

    STGW30H60DLFB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Surface Mount:

    NO

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STGW30H60DLFB Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGW30H60DLFB is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGW30H60DLFB can be calculated using the formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate resistor value for the STGW30H60DLFB depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10 Ω to 100 Ω to ensure proper switching and minimize ringing. However, it's recommended to consult the application note and perform simulations to determine the optimal gate resistor value for your specific design.
  • Yes, the STGW30H60DLFB can be used in a half-bridge configuration. However, it's essential to ensure that the device is properly biased and that the gate-source voltage (Vgs) is within the recommended range. Additionally, you should consider the dead-time and overlap requirements to prevent shoot-through and ensure proper operation.
  • The internal diode of the STGW30H60DLFB can be handled by using a diode in parallel with the device or by using a dedicated diode in the circuit. It's essential to ensure that the diode is properly rated for the application and that the switching frequency is within the recommended range.

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STGW30H60DLFB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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