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STGW40H120F2 - STMicroelectronics

Description: Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

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STGW40H120F2 - STMicroelectronics - PCB symbol
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STGW40H120F2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGW40H120F2
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STGW40H120F2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGW40H120F2
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STGW40H120F2 Details

  • Manufacturer Part Number:

    STGW40H120F2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    468 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    351 ns

  • Turn-on Time-Nom (ton):

    56 ns

  • VCEsat-Max:

    2.6 V

STGW40H120F2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGW40H120F2 can withstand is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.
  • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing power dissipation.
  • The recommended gate drive voltage for the STGW40H120F2 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the STGW40H120F2 can be used in a parallel configuration to increase power handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the STGW40H120F2 in a half-bridge configuration is typically around 100-200 ns. However, the optimal dead time may vary depending on the specific application and operating conditions.

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STGW40H120F2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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