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STGW40H65FB - STMicroelectronics

Description: STMicroelectronics STGW40H65FB, IGBT Transistor, 80 A 650 V, 3-Pin TO-247

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STGW40H65FB - STMicroelectronics - PCB symbol
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STGW40H65FB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGW40H65FB
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STGW40H65FB - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGW40H65FB
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STGW40H65FB Details

  • Manufacturer Part Number:

    STGW40H65FB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    283 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    202 ns

  • Turn-on Time-Nom (ton):

    52 ns

  • VCEsat-Max:

    2 V

STGW40H65FB Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STGW40H65FB is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is securely fastened to the device. Additionally, consider the airflow and thermal design of the system to prevent hotspots.
  • The recommended gate drive voltage for the STGW40H65FB is between 10V and 15V. However, it's essential to check the specific requirements of your application and ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the STGW40H65FB can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.
  • The recommended dead time for the STGW40H65FB is typically around 100-200 ns. However, the optimal dead time may vary depending on the specific application and switching frequency. It's essential to experiment and find the optimal dead time to minimize losses and ensure reliable operation.

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STGW40H65FB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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