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STGW60H65DRF - STMicroelectronics

Description: IGBT Transistors 60A 650V Field Stop Trench Gate IBGT

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STGW60H65DRF - STMicroelectronics - PCB symbol
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PCB Footprints
STGW60H65DRF - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - T O-247_
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3D Models
STGW60H65DRF - STMicroelectronics - 3D model - Transistor Outline, Vertical - T O-247_
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STGW60H65DRF Details

  • Manufacturer Part Number:

    STGW60H65DRF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    360 W

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

STGW60H65DRF Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STGW60H65DRF is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is securely fastened to the device. Additionally, consider the airflow and thermal design of the system to prevent hot spots.
  • The recommended gate drive voltage for the STGW60H65DRF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • Yes, the STGW60H65DRF can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and oscillations.
  • The recommended dead time for the STGW60H65DRF depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is recommended to prevent cross-conduction and ensure reliable operation.

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STGW60H65DRF Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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