Part Image

STGW80H65DFB - STMicroelectronics

Description: STMICROELECTRONICS - STGW80H65DFB - IGBT, SINGLE, 650V, 120A, TO-247

Download STGW80H65DFB Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STGW80H65DFB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MAX247_1
click to zoom
3D Models
STGW80H65DFB - STMicroelectronics  - 3D model - Transistor Outline, Vertical - MAX247_1
click to zoom

STGW80H65DFB Details

  • Manufacturer Part Number:

    STGW80H65DFB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    469 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

STGW80H65DFB Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGW80H65DFB can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing power dissipation. Additionally, consider using a thermistor or thermocouple to monitor the device temperature.
  • To minimize EMI, it's recommended to follow a compact PCB layout with short traces, use a solid ground plane, and keep sensitive analog circuits away from the power stage. Additionally, consider using shielding or a metal can to enclose the device.
  • The gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or seek guidance from STMicroelectronics' technical support for specific guidance.
  • The recommended dead time for the STGW80H65DFB is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency. However, it's recommended to consult the application note or seek guidance from STMicroelectronics' technical support for specific guidance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STGW80H65DFB Overview

Use the download button to access the STGW80H65DFB schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STGW8, or try a keyword search, such as IGBTs

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STGW80H65DFB

Showing 0 results