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STGW80H65FB - STMicroelectronics

Description: Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

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STGW80H65FB - STMicroelectronics - PCB symbol
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PCB Footprints
STGW80H65FB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGW80H65FB
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3D Models
STGW80H65FB - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGW80H65FB
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STGW80H65FB Details

  • Manufacturer Part Number:

    STGW80H65FB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active Unconfirmed

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    469 W

  • Surface Mount:

    NO

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STGW80H65FB Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STGW80H65FB is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure the device's lifespan.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is properly mounted. The recommended thermal resistance (Rth) is ≤ 1.5 K/W.
  • The recommended gate drive voltage for the STGW80H65FB is between 10 V and 15 V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the STGW80H65FB can be used in a parallel configuration to increase the overall current handling capability. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the STGW80H65FB is typically between 100 ns and 500 ns, depending on the specific application and switching frequency. A longer dead time can help reduce electromagnetic interference (EMI) and prevent shoot-through currents.

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STGW80H65FB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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