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STGW80V60F - STMicroelectronics

Description: Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

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STGW80V60F - STMicroelectronics - PCB symbol
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STGW80V60F - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGW80V60F
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3D Models
STGW80V60F - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGW80V60F
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STGW80V60F Details

  • Manufacturer Part Number:

    STGW80V60F

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    469 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    262 ns

  • Turn-on Time-Nom (ton):

    90 ns

  • VCEsat-Max:

    2.3 V

STGW80V60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the STGW80V60F is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the STGW80V60F is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the STGW80V60F can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the STGW80V60F is typically around 100ns to 200ns. However, the optimal dead time may vary depending on the specific application and operating conditions. It's essential to experiment with different dead times to find the optimal value for your specific use case.

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STGW80V60F Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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