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STGW8M120DF3 - STMicroelectronics

Description: Trench gate field-stop 1200 V, 8 A low-loss M series IGBT in a TO-247 and TO-247 long leads packages

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STGW8M120DF3 - STMicroelectronics - PCB symbol
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PCB Footprints
STGW8M120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 height 5.15
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3D Models
STGW8M120DF3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 height 5.15
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STGW8M120DF3 Details

  • Manufacturer Part Number:

    STGW8M120DF3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Manufacturer Package Code:

    TO-247

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    356 ns

  • Turn-on Time-Nom (ton):

    28.8 ns

  • VCEsat-Max:

    2.3 V

STGW8M120DF3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the STGW8M120DF3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, consider the airflow and ambient temperature of the operating environment.
  • The recommended PCB layout for the STGW8M120DF3 involves keeping the high-frequency signals away from the low-frequency signals, using a solid ground plane, and minimizing the length of the power traces. It's also essential to follow the layout guidelines provided in the datasheet and application notes.
  • To protect the STGW8M120DF3 from overvoltage and overcurrent, consider using voltage regulators, overvoltage protection (OVP) circuits, and overcurrent protection (OCP) circuits. Additionally, ensure that the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the STGW8M120DF3 is between 10V and 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage selection.

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STGW8M120DF3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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