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STGWA100H65DFB2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO‑247 long leads package

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STGWA100H65DFB2 - STMicroelectronics - PCB symbol
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STGWA100H65DFB2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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STGWA100H65DFB2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA100H65DFB2 Details

  • Manufacturer Part Number:

    STGWA100H65DFB2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-04-09

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    145 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    441 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    241 ns

  • Turn-on Time-Nom (ton):

    55 ns

  • VCEsat-Max:

    2 V

STGWA100H65DFB2 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The STGWA100H65DFB2 requires a gate driver with a minimum output current of 2A and a voltage rating of at least 15V. STMicroelectronics recommends using their L638x or L639x gate driver families, which are specifically designed for IGBT modules like the STGWA100H65DFB2.
  • The STGWA100H65DFB2 has an internal overcurrent protection (OCP) feature that limits the maximum current to 100A. If the current exceeds this limit, the module will shut down to prevent damage. The OCP threshold can be adjusted using an external resistor.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal management guidelines, including using a heat sink with a thermal resistance of less than 0.5°C/W, and ensuring good airflow around the module. Additionally, the module's temperature should be monitored using an external thermistor or thermocouple.
  • STMicroelectronics recommends using a snubber circuit with a resistance of 10Ω to 20Ω and a capacitance of 10nF to 20nF to reduce electromagnetic interference (EMI) and voltage overshoots. The snubber circuit should be connected between the collector and emitter terminals.

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STGWA100H65DFB2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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