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STGWA25S120DF3 - STMicroelectronics

Description: STMicroelectronics STGWA25S120DF3, IGBT Transistor, 50 A 1200 V, 3-Pin TO-247

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STGWA25S120DF3 - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA25S120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA25S120DF3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA25S120DF3 Details

  • Manufacturer Part Number:

    STGWA25S120DF3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    593 ns

  • Turn-on Time-Nom (ton):

    43 ns

  • VCEsat-Max:

    2.1 V

STGWA25S120DF3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STGWA25S120DF3 can withstand is 150°C, as specified in the datasheet.
  • To ensure reliability, it is recommended to follow the thermal management guidelines provided in the datasheet, including proper heat sinking, thermal interface materials, and airflow management.
  • The recommended gate drive voltage for the STGWA25S120DF3 is between 10V and 15V, as specified in the datasheet.
  • Yes, the STGWA25S120DF3 can be used in a parallel configuration to increase current handling, but it is essential to ensure proper synchronization and thermal management to avoid uneven current sharing and thermal runaway.
  • To protect the STGWA25S120DF3 from overvoltage and overcurrent conditions, it is recommended to use a suitable overvoltage protection circuit and a current sense resistor, along with a protection IC or a dedicated overcurrent protection device.

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STGWA25S120DF3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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