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STGWA30H65DFB - STMicroelectronics

Description: Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package

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STGWA30H65DFB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads_2022
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STGWA30H65DFB - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long leads_2022
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STGWA30H65DFB Details

  • Manufacturer Part Number:

    STGWA30H65DFB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    223 ns

  • Turn-on Time-Nom (ton):

    62.8 ns

  • VCEsat-Max:

    2 V

STGWA30H65DFB Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA30H65DFB is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGWA30H65DFB, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) of the package. The formula is: Pd = (Vds * Ids) + (Rth * Ids^2). You can find the values for Vds, Ids, and Rth in the datasheet.
  • The recommended gate drive voltage for the STGWA30H65DFB is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • Yes, the STGWA30H65DFB is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly cooled, and the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
  • To protect the STGWA30H65DFB from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. It's also essential to follow proper PCB design and layout guidelines to minimize parasitic inductance and capacitance.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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