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STGWA30H65FB - STMicroelectronics

Description: Trench gate field-stop 650 V, 30 A high speed HB series IGBT

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STGWA30H65FB - STMicroelectronics - PCB symbol
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STGWA30H65FB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads_2022
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STGWA30H65FB - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long leads_2022
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STGWA30H65FB Details

  • Manufacturer Part Number:

    STGWA30H65FB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    TO-247 long leads

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    223 ns

  • Turn-on Time-Nom (ton):

    51.1 ns

  • VCEsat-Max:

    2 V

STGWA30H65FB Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA30H65FB is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the maximum power dissipation, you need to consider the voltage, current, and thermal resistance of the device. The formula is: Pd = (Vds x Ids) + (Vgs x Igs), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. The thermal resistance (Rth) is also important, as it affects the junction temperature. Consult the datasheet for specific values and calculations.
  • The recommended gate drive voltage for the STGWA30H65FB is between 10V and 15V, with a maximum of 20V. This ensures proper switching and minimizes power losses. However, the optimal gate drive voltage may vary depending on the specific application and circuit design.
  • Proper cooling is crucial for the STGWA30H65FB. Ensure good thermal contact between the device and the heat sink or PCB. Use a suitable thermal interface material (TIM) and follow the recommended mounting procedure. The heat sink should be designed to dissipate the maximum power dissipation calculated earlier. Additionally, consider airflow, ambient temperature, and other environmental factors that may affect cooling.
  • The STGWA30H65FB has built-in ESD protection, but it's still essential to follow proper handling and storage precautions to prevent damage. Use an anti-static wrist strap, mat, or workstation, and avoid touching the device's pins or exposed internal components. Store the devices in their original packaging or use anti-static bags to prevent electrostatic discharge.

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STGWA30H65FB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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