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STGWA30IH65DF - STMicroelectronics

Description: Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO‑247 long leads package

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STGWA30IH65DF - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA30IH65DF - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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STGWA30IH65DF - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA30IH65DF Details

  • Manufacturer Part Number:

    STGWA30IH65DF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-06-12

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    312 ns

  • VCEsat-Max:

    2.05 V

STGWA30IH65DF Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA30IH65DF is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGWA30IH65DF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The formula is: Pd = (Vds * Ids) + (Rth(j-a) * Tj). Refer to the datasheet for the specific values.
  • The recommended gate resistor value for the STGWA30IH65DF depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 Ω to 100 Ω to ensure proper switching and minimize ringing. However, it's recommended to consult the application note or a dedicated gate driver datasheet for more specific guidance.
  • Yes, the STGWA30IH65DF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate driver and layout are optimized for high-frequency operation.
  • To protect the STGWA30IH65DF from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, ensure that the device is operated within its specified ratings and that the PCB layout is designed to minimize parasitic inductance and capacitance.

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STGWA30IH65DF Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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