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STGWA40H120F2 - STMicroelectronics

Description: Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

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STGWA40H120F2 - STMicroelectronics - PCB symbol
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STGWA40H120F2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads_2022
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STGWA40H120F2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long leads_2022
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STGWA40H120F2 Details

  • Manufacturer Part Number:

    STGWA40H120F2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    468 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    351 ns

  • Turn-on Time-Nom (ton):

    56 ns

  • VCEsat-Max:

    2.6 V

STGWA40H120F2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA40H120F2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGWA40H120F2 can be calculated using the formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate drive voltage for the STGWA40H120F2 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink, thermal interface material, and airflow. The datasheet provides guidelines for thermal design and heat sink selection. Additionally, consider using a thermal simulation tool to optimize the thermal design.
  • The maximum allowed voltage imbalance between the high-side and low-side FETs is typically ±5V, as specified in the datasheet. Exceeding this limit may lead to device damage or malfunction.

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STGWA40H120F2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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