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STGWA40H65DFB2 - STMicroelectronics

Description: Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO‑247 long leads package

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STGWA40H65DFB2 - STMicroelectronics - PCB symbol
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STGWA40H65DFB2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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STGWA40H65DFB2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA40H65DFB2 Details

  • Manufacturer Part Number:

    STGWA40H65DFB2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2019-06-14

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    72 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    158 ns

  • Turn-on Time-Nom (ton):

    34 ns

  • VCEsat-Max:

    2 V

STGWA40H65DFB2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the STGWA40H65DFB2 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W for the STGWA40H65DFB2.
  • The recommended gate drive voltage for the STGWA40H65DFB2 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the STGWA40H65DFB2 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the STGWA40H65DFB2 is typically in the range of 100ns to 500ns, depending on the specific application and switching frequency. A longer dead time can help prevent cross-conduction, but may also increase switching losses.

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STGWA40H65DFB2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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