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STGWA40H65FB - STMicroelectronics

Description: Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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STGWA40H65FB - STMicroelectronics - PCB symbol
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PCB Footprints
STGWA40H65FB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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3D Models
STGWA40H65FB - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA40H65FB Details

  • Manufacturer Part Number:

    STGWA40H65FB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    283 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    202 ns

  • Turn-on Time-Nom (ton):

    52 ns

  • VCEsat-Max:

    2 V

STGWA40H65FB Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA40H65FB is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the maximum power dissipation, you need to consider the package thermal resistance (Rthja), the maximum junction temperature (Tj), and the ambient temperature (Ta). The formula is: Pd(max) = (Tj - Ta) / Rthja. For the STGWA40H65FB, Rthja is approximately 1.5°C/W.
  • The recommended gate drive voltage for the STGWA40H65FB is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage and ensure proper operation.
  • Yes, the STGWA40H65FB can be used in a parallel configuration to increase the overall current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage.
  • The minimum input pulse width required for the STGWA40H65FB is approximately 100ns. However, it's recommended to use a pulse width of at least 500ns to ensure proper operation and prevent false triggering.

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STGWA40H65FB Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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