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STGWA40IH65DF - STMicroelectronics

Description: Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO‑247 long leads package

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STGWA40IH65DF - STMicroelectronics - PCB symbol
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STGWA40IH65DF - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA40IH65DF - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA40IH65DF Details

  • Manufacturer Part Number:

    STGWA40IH65DF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    238 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    263 ns

  • VCEsat-Max:

    2 V

STGWA40IH65DF Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA40IH65DF is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To calculate the power dissipation of the STGWA40IH65DF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The formula is: Pd = (Vds * Ids) + (Rth(j-a) * Tj). Refer to the datasheet for the specific values.
  • The recommended gate drive voltage for the STGWA40IH65DF is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to avoid damage to the device.
  • Yes, the STGWA40IH65DF is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, thermal management, and layout design to ensure reliable operation.
  • To protect the STGWA40IH65DF from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing resistors. Additionally, consider implementing thermal protection and fault detection mechanisms to prevent damage to the device.

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STGWA40IH65DF Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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