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STGWA40S120DF3 - STMicroelectronics

Description: STMicroelectronics STGWA40S120DF3, IGBT Transistor, 80 A 1200 V, 3-Pin TO-247

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STGWA40S120DF3 - STMicroelectronics - PCB symbol
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STGWA40S120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STGWA40S120DF3*1
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STGWA40S120DF3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - STGWA40S120DF3*1
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STGWA40S120DF3 Details

  • Manufacturer Part Number:

    STGWA40S120DF3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    158.46 ns

  • Turn-on Time-Nom (ton):

    50 ns

STGWA40S120DF3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGWA40S120DF3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGWA40S120DF3 can be calculated using the formula: Rth = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate resistance (Rg) for the STGWA40S120DF3 is typically in the range of 10 ohms to 100 ohms, depending on the application and switching frequency. A higher gate resistance can help reduce electromagnetic interference (EMI) and improve noise immunity.
  • Yes, the STGWA40S120DF3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive circuits are designed to handle the increased current and voltage requirements.
  • The minimum switching frequency for the STGWA40S120DF3 is not explicitly specified in the datasheet. However, it's generally recommended to operate the device at a minimum frequency of 1 kHz to 5 kHz to ensure proper switching and minimize losses.

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STGWA40S120DF3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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