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STGWA60V60DWFAG - STMicroelectronics

Description: Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

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STGWA60V60DWFAG - STMicroelectronics - PCB symbol
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STGWA60V60DWFAG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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STGWA60V60DWFAG - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STGWA60V60DWFAG Details

  • Manufacturer Part Number:

    STGWA60V60DWFAG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2019-10-25

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    280 ns

  • Turn-on Time-Nom (ton):

    55 ns

  • VCEsat-Max:

    2.3 V

STGWA60V60DWFAG Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the STGWA60V60DWFAG is 175°C, as specified in the datasheet.
  • To ensure reliability, follow the recommended thermal management guidelines, such as using a heat sink, optimizing the PCB layout, and minimizing thermal resistance. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate drive voltage for the STGWA60V60DWFAG is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the STGWA60V60DWFAG can be used in a half-bridge configuration. However, it's essential to ensure proper dead-time management and synchronization between the high-side and low-side switches to prevent shoot-through currents.
  • To calculate power losses, you'll need to consider conduction losses, switching losses, and gate drive losses. Use the datasheet's thermal and electrical characteristics, along with your application's specific operating conditions, to estimate the power losses. You can also use simulation tools or consult with an application engineer for more accurate calculations.

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STGWA60V60DWFAG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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