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STGWA80H65DFB - STMicroelectronics

Description: Trench gate field-stop 650 V, 80 A high speed HB series IGBT

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STGWA80H65DFB - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA80H65DFB - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STGWA80H65DFB Details

  • Manufacturer Part Number:

    STGWA80H65DFB

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    120 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    470 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    358 ns

  • Turn-on Time-Nom (ton):

    128 ns

  • VCEsat-Max:

    2 V

STGWA80H65DFB Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STGWA80H65DFB is -40°C to 150°C.
  • To ensure reliability, follow the recommended thermal management guidelines, use a suitable heat sink, and ensure proper PCB design and layout.
  • The recommended gate drive voltage for the STGWA80H65DFB is between 10V and 15V, with a maximum of 20V.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to prevent damage to the device.
  • The maximum allowed dv/dt for the STGWA80H65DFB is 10 kV/μs, but it's recommended to limit it to 5 kV/μs for reliable operation.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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