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STGYA50H120DF2 - STMicroelectronics

Description: Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package

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STGYA50H120DF2 - STMicroelectronics - PCB symbol
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PCB Footprints
STGYA50H120DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MAX247_1
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3D Models
STGYA50H120DF2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - MAX247_1
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STGYA50H120DF2 Details

  • Manufacturer Part Number:

    STGYA50H120DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    535 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    338 ns

  • Turn-on Time-Nom (ton):

    63 ns

  • VCEsat-Max:

    2.6 V

STGYA50H120DF2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGYA50H120DF2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGYA50H120DF2 can be calculated using the formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate drive voltage for the STGYA50H120DF2 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption and EMI.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a cooling system. Use a thermal interface material (TIM) with a low thermal resistance, and ensure the heat sink is properly mounted and secured. Additionally, consider using a fan or a liquid cooling system for high-power applications.
  • The STGYA50H120DF2 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, wrist straps, and mats to prevent damage from static electricity.

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STGYA50H120DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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