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STGYA50M120DF3 - STMicroelectronics

Description: Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package

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STGYA50M120DF3 - STMicroelectronics - PCB symbol
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PCB Footprints
STGYA50M120DF3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - Max247 long leads
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3D Models
STGYA50M120DF3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - Max247 long leads
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STGYA50M120DF3 Details

  • Manufacturer Part Number:

    STGYA50M120DF3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    535 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    400 ns

  • Turn-on Time-Nom (ton):

    54 ns

  • VCEsat-Max:

    2.2 V

STGYA50M120DF3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGYA50M120DF3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • The thermal resistance (Rth) for the STGYA50M120DF3 can be calculated using the formula: Rth = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate resistor value for the STGYA50M120DF3 depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 ohms and 100 ohms to ensure proper switching and minimize electromagnetic interference (EMI). However, it's recommended to consult the application note or seek guidance from STMicroelectronics for specific recommendations.
  • Yes, the STGYA50M120DF3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive circuitry is designed to handle the increased current. Additionally, the thermal management and PCB design should be carefully considered to prevent hotspots and ensure reliable operation.
  • The minimum voltage rating for the STGYA50M120DF3 is 10V, and the maximum voltage rating is 1200V. It's essential to operate the device within this voltage range to ensure proper operation and prevent damage.

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STGYA50M120DF3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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