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STGYA75H120DF2 - STMicroelectronics

Description: Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

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STGYA75H120DF2 - STMicroelectronics - PCB symbol
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STGYA75H120DF2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - Max247 long leads_2021
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STGYA75H120DF2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - Max247 long leads_2021
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STGYA75H120DF2 Details

  • Manufacturer Part Number:

    STGYA75H120DF2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    750 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    406 ns

  • Turn-on Time-Nom (ton):

    95 ns

  • VCEsat-Max:

    2.6 V

STGYA75H120DF2 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The STGYA75H120DF2 requires a gate driver with a minimum output current of 2A and a voltage rating of at least 15V. STMicroelectronics recommends using their L639x or STGAPx series of gate drivers, which are specifically designed for IGBT modules.
  • The STGYA75H120DF2 has an internal overcurrent protection (OCP) feature that limits the maximum current to 150A. However, it's recommended to implement an external OCP circuit to ensure reliable operation and prevent damage to the module.
  • Yes, the STGYA75H120DF2 can be used in a parallel configuration to increase the overall current rating. However, it's essential to ensure that the modules are properly synchronized and matched to prevent uneven current sharing and reduce the risk of thermal runaway.
  • For high-power applications, a forced-air cooling system or a liquid cooling system is recommended to maintain a safe operating temperature. The cooling system should be designed to keep the module's temperature below 125°C to ensure reliable operation and prevent thermal degradation.

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STGYA75H120DF2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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