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SVD5867NLT4G - onsemi

Description: N-Channel 60 V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

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SVD5867NLT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GUAGE) CASE 369AA ISSUE B_2025
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SVD5867NLT4G - onsemi  - 3D model - Other - DPAK (SINGLE GUAGE) CASE 369AA ISSUE B_2025
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SVD5867NLT4G Details

  • Manufacturer Part Number:

    SVD5867NLT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3

  • Manufacturer Package Code:

    369AA

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-05-18

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    85 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SVD5867NLT4G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
  • Monitor the device's junction temperature, output voltage, and current. Implement over-temperature protection, over-voltage protection, and over-current protection.
  • Use a low-dropout linear regulator or a switching regulator with a low quiescent current. Optimize the PCB layout for minimal power loss and use low-ESR capacitors.
  • Use a TVS diode or a transient voltage suppressor at the input and output pins. Implement a robust ESD protection scheme, including a ground plane and ESD-sensitive component handling procedures.

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SVD5867NLT4G Overview

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Part Image NVD5867NLT4G onsemi

Power Field-Effect Transistor, 22A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET