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SZESD7551MXWT5G - onsemi

Description: Stand−off Voltage: 3.3 V; Low Leakage: <1µA; IEC61000−4−2 Level 4 ESD Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Ultra−Low Capacitance (0.35 pF Max); Low Clamping Voltage; Response Time is < 1 ns; Low Dynamic Resistance < 1 Ω; SZESD7551MXWT5G Wettable Flank Package

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SZESD7551MXWT5G Details

  • Manufacturer Part Number:

    SZESD7551MXWT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X2DFNW2

  • Package Description:

    X2DFNW2, 2 PIN

  • Manufacturer Package Code:

    711BG

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2020-04-28

  • Manufacturer:

    onsemi

  • YTEOL:

    6.44

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Max:

    7.5 V

  • Breakdown Voltage-Min:

    5 V

  • Breakdown Voltage-Nom:

    6 V

  • Clamping Voltage-Max:

    13 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    39 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.25 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD7551MXWT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD7551MXWT5G involves keeping the input and output traces short and separate, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. The EN pin should be tied to a logic high (VCC) to enable the device. Additionally, decouple the VCC pin with a 10uF capacitor to ground to reduce noise and ensure stable operation.
  • The SZESD7551MXWT5G is rated for operation from -40°C to 125°C (TJ). However, it's recommended to operate the device within a temperature range of -20°C to 85°C for optimal performance and reliability.
  • Yes, the SZESD7551MXWT5G is AEC-Q100 qualified, making it suitable for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions, PCB layout, and thermal management guidelines to ensure the device meets the required reliability and performance standards.
  • To troubleshoot issues with the SZESD7551MXWT5G, start by verifying the power supply voltage, ensuring it's within the recommended range. Check the EN pin for proper logic levels and ensure the device is properly biased. Use an oscilloscope to monitor the input and output signals, and check for any signs of overheating or electrical overstress.

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