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SZESD9B3.3ST5G - onsemi

Description: SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ; AECQ101 Qualified and PPAP Capable ; This is a PbFree Device; Low Capacitance 15 pF; Low Clamping Voltage; Small Body Outline Dimensions: 0.039 x 0.024 (1.0mm x 0.60mm); Low Body Height: 0.016 (0.4 mm); Response Time is < 1 ns; IEC6100042 Level 4 ESD Protection; Low Leakage

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SZESD9B3.3ST5G Details

  • Manufacturer Part Number:

    SZESD9B3.3ST5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-923-2

  • Package Description:

    SOD-923, 2 PIN

  • Manufacturer Package Code:

    514AB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.44

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

  • Breakdown Voltage-Max:

    7 V

  • Breakdown Voltage-Min:

    5 V

  • Breakdown Voltage-Nom:

    6 V

  • Clamping Voltage-Max:

    11.5 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.3 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-4

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD9B3.3ST5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD9B3.3ST5G involves keeping the input and output traces short and separate, using a solid ground plane, and placing the device close to the power source. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure proper biasing, connect the EN pin to a voltage source (e.g., 3.3V) through a 10kΩ resistor. The VIN pin should be connected to a stable voltage source (e.g., 3.3V) with a 10μF capacitor in parallel to filter out noise.
  • The maximum allowable power dissipation for the SZESD9B3.3ST5G is 1.5W. Ensure that the device is properly heat-sinked and the ambient temperature is within the recommended operating range to prevent overheating.
  • The SZESD9B3.3ST5G is rated for operation up to 125°C. However, it's essential to ensure proper heat sinking and thermal management to prevent overheating. Consult the datasheet for thermal resistance and junction temperature specifications.
  • To troubleshoot issues, start by verifying the power supply voltage, checking for proper biasing, and ensuring the input and output capacitors are correctly connected. Use an oscilloscope to monitor the output voltage and check for noise or oscillations.

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SZESD9B3.3ST5G Overview

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Part Image ESD9B3.3ST5G onsemi

Trans Voltage Suppressor Diode, 3.3V V(RWM), Unidirectional, 1 Element, Silicon