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TF252TH-5-TL-H - onsemi

Description: N-channel JFET Transistor, 2 V, Idss 0.21 ??0.35mA, 3-pin VTFP%0%0

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TF252TH-5-TL-H - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - TF252TH-5-TL-H
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TF252TH-5-TL-H - onsemi  - 3D model - SO Transistor Flat Lead - TF252TH-5-TL-H
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TF252TH-5-TL-H Details

  • Manufacturer Part Number:

    TF252TH-5-TL-H

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN AND LEAD FREE, ULTRA SMALL, SC-106A, VTFP, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    631AD

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Drain Current-Max (ID):

    0.001 A

  • FET Technology:

    JUNCTION

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

TF252TH-5-TL-H Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the TF252TH-5-TL-H is a thermal pad with a minimum size of 2.5mm x 2.5mm, with a non-solder mask defined (NSMD) pad and a 0.5mm keep-out zone around the thermal pad.
  • To ensure reliable operation in high-temperature environments, ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and provide adequate heat sinking and thermal management to prevent overheating.
  • The maximum allowed voltage transient for the TF252TH-5-TL-H is ±20% of the rated voltage, with a maximum duration of 100ms. Exceeding this may cause device damage or failure.
  • Yes, the TF252TH-5-TL-H can be used in a parallel configuration to increase current handling, but ensure that the devices are matched in terms of electrical characteristics and thermal performance to prevent uneven current sharing and potential reliability issues.
  • The recommended storage condition for the TF252TH-5-TL-H is in a dry, cool place with a relative humidity of 60% or less, and a temperature range of 5°C to 30°C. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures.

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TF252TH-5-TL-H Overview

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Part Image TF252TH5 SANYO Semiconductor Co Ltd

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