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TK20A60W,S5VX - Toshiba

Description: MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A

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TK20A60W,S5VX - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TK20A60W,S5VX
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TK20A60W,S5VX - Toshiba  - 3D model - Transistor Outline, Vertical - TK20A60W,S5VX
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TK20A60W,S5VX Details

  • Manufacturer Part Number:

    TK20A60W,S5VX

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.155 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK20A60W,S5VX Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers connected to the drain pin, and to use thermal vias to dissipate heat. Additionally, keeping the component placement and routing symmetrical can help to reduce thermal gradients.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet, and ensure that the gate-source voltage is within the recommended range. Additionally, use a gate resistor to limit the gate current and prevent oscillation.
  • Critical parameters to monitor during operation to prevent overheating include the device temperature, drain-source voltage, and drain current. Monitoring these parameters can help prevent overheating and ensure reliable operation.
  • To protect the device from electrostatic discharge (ESD), handle the device by the body or use an anti-static wrist strap, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
  • To prevent damage, store the devices in their original packaging or in a dry, cool place, away from direct sunlight and moisture. Handle the devices by the body or use an anti-static wrist strap, and avoid bending or flexing the leads.

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TK20A60W,S5VX Overview

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