TK20A Model Download Search Results
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TK20A25D
Toshiba
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1 | atures(1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.)(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) | Transistor Outline, Vertical | TK20A25D |
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TK20A20D
Toshiba
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1 | N-ch MOSFET, 200 V, 0.109 Ω@10V, TO-220SIS, π-MOSⅦ | Other | TK20A20D |
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TK20A60W,S5VX
Toshiba
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1 | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | Transistor Outline, Vertical | TK20A60W,S5VX |
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TK20A60W5
Toshiba
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1 | N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-220SIS, DTMOSⅣ | Other | TK20A60W5 |
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TK20A60W5,S5VX(M
Toshiba
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1 | Toshiba TK20A60W5,S5VX(M N-channel MOSFET Transistor, 20 A, 600 V, 3-Pin TO-220SIS | Transistor Outline, Vertical | TK20A60W5,S5VX(M |
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TK20A60W,S5VX(M
Toshiba
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1 | Toshiba TK20A60W,S5VX(M N-channel MOSFET Transistor, 20 A, 600 V, 3-Pin TO-220SIS | Transistor Outline, Vertical | TK20A60W,S5VX(M |
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TK20A60W
Toshiba
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1 | N-ch MOSFET, 600 V, 0.155 Ω@10V, TO-220SIS, DTMOSⅣ | Other | TK20A60W |
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TK20A25D,S5X(J
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 20A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | TK20A25D,S5X(J |
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TK20A60W5,S5VX
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | TK20A60W5,S5VX |
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TK20A60U(Q)
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TK20A60U(Q) |
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TK20A25D,S5X(M
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 20A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | TK20A25D,S5X(M |
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TK20A60U
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TK20A60U |
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TK20A60U(STA4,Q,M)
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TK20A60U(STA4,Q,M) |
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TK20A60T
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TK20A60T |
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![Part Image](["https://componentsearchengine.com/2D/0/18306224.png",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
![Part Image](["https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/design-development/package-detail/Pkg_img/TO-220SIS.png","https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/design-development/package-detail/Pkg_img/TO-220SIS.png",null])
![Part Image](["https://componentsearchengine.com/Images/9/TK20A60W,S5VX.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/TK20A60W5,S5VX(M.jpg",null,null])
![Part Image](["https://media.rs-online.com/t_large/R7995062-01.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_TO-220-3%20Full%20Pack.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sc67_3.jpg"])
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