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TK4P60DB - Toshiba

Description: N-ch MOSFET, 600 V, 2.0 Ω@10V, DPAK, π-MOSⅦ

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PCB Footprints
TK4P60DB - Toshiba PCB footprint - Other - Other - 2-7K1S_2-7N1S
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3D Models
TK4P60DB - Toshiba  - 3D model - Other - 2-7K1S_2-7N1S
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TK4P60DB Details

  • Manufacturer Part Number:

    TK4P60DB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    2-7K1A, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    147 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Pulsed Drain Current-Max (IDM):

    14.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TK4P60DB Overview

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