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TK65G10N1 - Toshiba

Description: TK65G10N1 N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba

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TK65G10N1 - Toshiba PCB footprint - Other - Other - TK65G10N1-2
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TK65G10N1 Details

  • Manufacturer Part Number:

    TK65G10N1

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    D2PAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Avalanche Energy Rating (Eas):

    93 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    42 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    283 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK65G10N1 Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Implement a thermal management system, such as a heat sink or fan, to keep the junction temperature below 150°C. Also, ensure proper PCB design and layout to minimize thermal resistance.
  • Although not specified in the datasheet, Toshiba recommends limiting voltage transients to ±10% of the rated voltage to prevent damage or malfunction.
  • Yes, the TK65G10N1 is qualified for automotive and high-reliability applications, but additional testing and validation may be required to meet specific industry standards.
  • Implement ESD protection measures, such as TVS diodes or ESD protection ICs, to prevent damage from electrostatic discharge. Follow proper handling and storage procedures to minimize ESD risks.

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