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TN2130K1-G - Microchip

Description: N-Channel 300 V 85mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23)

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TN2130K1-G - Microchip PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - 3-Lead TO-236AB (SOT-23)
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TN2130K1-G - Microchip  - 3D model - SOT23 (3-Pin) - 3-Lead TO-236AB (SOT-23)
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TN2130K1-G Details

  • Manufacturer Part Number:

    TN2130K1-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT-23-3

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    5 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    0.085 A

  • Drain-source On Resistance-Max:

    25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.36 W

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TN2130K1-G Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer. This helps to dissipate heat efficiently. Additionally, placing thermal vias under the device can improve heat dissipation.
  • To ensure reliable operation across the entire operating temperature range, it is essential to follow proper PCB design and layout guidelines, use a suitable thermal interface material, and ensure proper cooling mechanisms are in place. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature and implement thermal protection mechanisms if necessary.
  • The recommended soldering profiles for the TN2130K1-G are as follows: Peak temperature: 240°C, Time above 217°C: 20-40 seconds, Time above 200°C: 60-120 seconds. It is essential to follow these profiles to prevent damage to the device during the soldering process.
  • To troubleshoot issues related to the device's power-on reset (POR) circuitry, check the power supply voltage, ensure the voltage is within the recommended range, and verify that the POR pin is properly connected. Also, check for any noise or glitches on the power supply lines that may be affecting the POR circuitry.
  • Operating the device at the maximum junction temperature can reduce its lifespan and affect its overall reliability. It is essential to ensure proper cooling mechanisms are in place to prevent overheating and reduce the risk of device failure.

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TN2130K1-G Overview

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About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Part Image TN2130K1-G-VAO Microchip Technology Inc

Small Signal Field-Effect Transistor, 0.085A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB